Talk:Swap: Difference between revisions
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:The document that the "[[Hardware specification]]" page calls the "[[Media:CL1_Hdwe_Design_Spec.pdf|Definitive Laptop Specification]]", which is dated 9/13/07, says "The endurance of the NAND device is one hundred thousand erase cycles". The [[Swap]] article, with edit dates 12/23-28/07, says the "internal flash chip is only rated for 3000 writes/cell". I do not know which of these statements to believe. Did the "definitive laptop specification" become less "definitive" between 9/13 and 12/23? In particular, I would like to know the endurance rating of the flash memory in my G1G1 XO-1, ordered 11/12/07 and shipped 12/17/07. I also hope that a future release will be fixed so that it will be possible to swap on the built-in SD card slot, or use it as an extension of memory, which seems to be what was intended. |
:The document that the "[[Hardware specification]]" page calls the "[[Media:CL1_Hdwe_Design_Spec.pdf|Definitive Laptop Specification]]", which is dated 9/13/07, says "The endurance of the NAND device is one hundred thousand erase cycles". The [[Swap]] article, with edit dates 12/23-28/07, says the "internal flash chip is only rated for 3000 writes/cell". I do not know which of these statements to believe. Did the "definitive laptop specification" become less "definitive" between 9/13 and 12/23? In particular, I would like to know the endurance rating of the flash memory in my G1G1 XO-1, ordered 11/12/07 and shipped 12/17/07. I also hope that a future release will be fixed so that it will be possible to swap on the built-in SD card slot, or use it as an extension of memory, which seems to be what was intended. |
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::The author of that comment was someone like you, scribbling in the wiki. They were wrong. The NAND Flash used in the XO-1 has been and continues to be SLC NAND rated at 100,000 write cycles. The newer MLC NAND, and higher density SLC NAND devices both have write cycle endurances in the 5K range. But don't worry, I've been testing several for months, writing and erasing continuously to an almost full device and haven't seen problems (see [[NAND Testing]]). |
::The author of that comment was someone like you, scribbling in the wiki. They were wrong. The NAND Flash used in the XO-1 has been and continues to be SLC NAND rated at 100,000 write cycles. The newer MLC NAND, and higher density SLC NAND devices both have write cycle endurances in the 5K range. But don't worry, I've been testing several for months, writing and erasing continuously to an almost full device and haven't seen problems (see [[NAND Testing]]).--[[User:Wad|Wad]] 05:49, 25 February 2009 (UTC) |
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--[[User:Wad|Wad]] 05:49, 25 February 2009 (UTC) |
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Revision as of 05:50, 25 February 2009
user:mike41430
- The document that the "Hardware specification" page calls the "Definitive Laptop Specification", which is dated 9/13/07, says "The endurance of the NAND device is one hundred thousand erase cycles". The Swap article, with edit dates 12/23-28/07, says the "internal flash chip is only rated for 3000 writes/cell". I do not know which of these statements to believe. Did the "definitive laptop specification" become less "definitive" between 9/13 and 12/23? In particular, I would like to know the endurance rating of the flash memory in my G1G1 XO-1, ordered 11/12/07 and shipped 12/17/07. I also hope that a future release will be fixed so that it will be possible to swap on the built-in SD card slot, or use it as an extension of memory, which seems to be what was intended.
- The author of that comment was someone like you, scribbling in the wiki. They were wrong. The NAND Flash used in the XO-1 has been and continues to be SLC NAND rated at 100,000 write cycles. The newer MLC NAND, and higher density SLC NAND devices both have write cycle endurances in the 5K range. But don't worry, I've been testing several for months, writing and erasing continuously to an almost full device and haven't seen problems (see NAND Testing).--Wad 05:49, 25 February 2009 (UTC)