XO 1.75 Parts: Difference between revisions
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|Hynix, 128Mx8, H5TQ1G83TFR-H9C? |
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|Toshiba 4GB 24nm, THGBM4G6D2HBAIR |
|Toshiba 4GB 24nm, THGBM4G6D2HBAIR |
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Revision as of 07:13, 13 April 2012
This page is monitored by the OLPC team.
In the pre-production SKUs, vendors are explicitly specified, allowing us to more easily identify problems specific to a particular component. In production, a particular SKU may contain various qualified parts for a specific component. This chart details the components used in XO-1.75 preproduction laptops:
| Build | SKU | DDR3 DRAM | eMMC Flash ROM | LP Sus |
Keyboard |
| B1 | 198 | Hynix 128Mx8, H5TQ1G83TFR-H9C | Toshiba 4GB 32nm, THGBM3G5D1FBAIE | chewy | |
| 199 | Samsung 128Mx8, K4B1G0846G-BCH9 | Sandisk 4GB 32nm, SDIN5C2-4G | crunchy | ||
| C1 | 200 | Nanya 128Mx8, NT5CB128M8DN-CF | Toshiba 8GB 24nm, THGBM4G6D2HBAIR | grid T5 | |
| 201 | Hynix 256Mx8, H5TQ2G83BFR-H9C | Toshiba 8GB 24nm, THGBM4G6D2HBAIR | crunchy | ||
| 202 | Nanya 256Mx8, NT5CB256M8BN-CG | Sandisk 8GB 32nm, SDIN5C2-8G | grid T4 portuguese | ||
| Ramp | 203 | Hynix, 128Mx8, H5TQ1G83TFR-H9C | SanDisk 4GB 32nm, SDIN5C2-4G | grid T6 | |
| 204 | Hynix, 256Mx8, H5TQ2G83BFR-H9C | Toshiba 8GB 24nm, THGBM4G6D2HBAIR | Y | crunchy | |
| Testing | 200X1 | Hynix, 128Mx8, H5TQ1G83TFR-H9C? | Toshiba 4GB 24nm, THGBM4G6D2HBAIR | Y | various |
| 200X2 | Hynix, 128Mx8, H5TQ1G83TFR-H9C ? | Toshiba 4GB 24 nm, THGBM4G5D1HBAIR | Y | various | |
| 200X3 | ? | ? | Y | various |
LP Sus -- indicates that a SKU is capable of reaching the expected power levels in suspend, using the "hardware" suspend method.
Testing builds are small runs made during production to test new components.